PN Junction Lab Pro

Diode Material

Temperature 25°C

Leakage current doubles every 10°C rise.

Observations

Bias	V (Volts)	I (mA/µA)

A PN junction is formed by joining P-type and N-type semiconductors. The characteristics depend heavily on the material (Si vs Ge) and temperature.

$$ I = I_S ( e^{V / n V_T} - 1 ) $$

Property	Silicon	Germanium
Knee Volts	~0.7 V	~0.3 V
Leakage	Nano-Amps	Micro-Amps

I-V Characteristics Curve

Current

0.00 mA

Voltage

0.00 V

Si-Diode

Voltage Source 0.0 V

Bias Configuration